Samsung Electronics is now mass producing its most advanced 8Gbit, DDR4 memory and 32GB registered dual in-line memory modules (RDIMM).
The DDR4 memory is built on a new 20-nanometer (nm) process technology and marketed for use in enterprise servers.
"By expanding the production of our 20nm DRAM line-ups, we will provide premium, high-density DRAM products, while handling increasing demand from customers in the global premium enterprise market." Jeeho Baek, vice president of Memory Marketing at Samsung Electronics, said in a statement.
The new 8Gb DDR4 is the last in a line-up of 20nm-based DRAM that also includes the 20nm 4Gb DDR3 for PCs and the 20nm 6Gb LPDDR3 for mobile devices.
Using the new 8Gb DDR4 chip, Samsung began producing the 32GB module earlier this month. The new module's data transfer rate per pin reaches up to 2.4Gbps, which represents about a 29% performance increase over the previous 1.866Mbps bandwidth DDR3 server module.
Beyond the 32GB RDIMM modules, the new 8Gb chips will allow production of server modules with a maximum capacity of 128GB by applying 3D through silicon via (TSV) technology, which will encourage further expansion of the high-density DRAM market, the company said.
The new high density DDR4, also boasts improved error-correction features, which will increase memory reliability in the design of enterprise servers. In addition, the new DDR4 chip and module use 1.2 volt, which is currently the lowest possible voltage.